Influence of embedding Cu nano-particles into a Cu/SiO2/Pt structure on its resistive switching
نویسندگان
چکیده
Cu nano-particles (Cu-NPs) were embedded into the SiO2 layer of a Cu/SiO2/Pt structure to examine their influence on resistive switching characteristics. The device showed a reversible resistive switching behavior, which was due to the formation and rupture of a Cu-conducting filament with an electrochemical reaction. The Cu-NPs enhanced the local electric field within the SiO2 layer, which caused a decrease in the forming voltage. During successive switching processes, the Cu-NP was partially dissolved, which changed its shape. Therefore, the switching voltages were not reduced. Moreover, the Cu-NPs caused a non-uniform Cu concentration within the SiO2 layer; thus, the Cu-conducting filament should be formed in a high Cu concentration region, which improves switching dispersion. The Cu-NPs within the SiO2 layer stabilize the resistive switching, resulting in a larger switching window and better endurance characteristics.
منابع مشابه
Effects of a CuxO Buffer Layer on a SiOx-Based Memory Device in a Vaporless Environment
The resistive switching characteristics of the Cu/SiO x /Pt structure (control sample) exhibited a direct correlation to humidity. The H2O vapor formed the Cu oxide at the Cu/SiO x interface, and Cu ions were injected from the Cu oxide into the SiO x layer, thus improving the resistive switching. However, the control sample demonstrated substantial switching dispersion in a vaporless environmen...
متن کاملInfluence of Cu diffusion conditions on the switching of Cu–SiO2-based resistive memory devices
متن کامل
Advanced Cu chemical displacement technique for SiO2-based electrochemical metallization ReRAM application
This study investigates an advanced copper (Cu) chemical displacement technique (CDT) with varying the chemical displacement time for fabricating Cu/SiO2-stacked resistive random-access memory (ReRAM). Compared with other Cu deposition methods, this CDT easily controls the interface of the Cu-insulator, the switching layer thickness, and the immunity of the Cu etching process, assisting the 1-t...
متن کاملOn the resistive switching mechanisms of Cu/ZrO2 :Cu/Pt
We use convincing experimental evidences to demonstrate that the nonpolar resistive switching phenomenon observed in Cu /ZrO2 :Cu /Pt memory devices conforms to a filament formation and annihilation mechanism. Temperature-dependent switching characteristics show that a metallic filamentary channel is responsible for the low resistance state "ON state#. Further analysis reveals that the physical...
متن کاملEffect of Different Nano-Sized Silica Sols as Supports on the Structure and Properties of Cu/SiO2 for Hydrogenation of Dimethyl Oxalate
Cu/x-SiO2 catalysts with 4, 10, and 20 nm silica sols as supports was produced by ammonia evaporation method and characterized. Different nano-sized silica sols as supports significantly affected the structure and catalytic properties of the copper catalysts for ethylene glycol synthesis from dimethyl oxalate. Compared with Cu/20-SiO2 and Cu/4-SiO2 catalysts, the catalytic performance and stabi...
متن کامل